IXTH52P10P IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO247-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 149 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 10.47 EUR |
| 11+ | 6.75 EUR |
| 12+ | 6.38 EUR |
| 120+ | 6.19 EUR |
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Technische Details IXTH52P10P IXYS
Description: MOSFET P-CH 100V 52A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V.
Weitere Produktangebote IXTH52P10P nach Preis ab 6.19 EUR bis 14.22 EUR
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IXTH52P10P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3 Technology: PolarP™ Mounting: THT Kind of package: tube Drain-source voltage: -100V Drain current: -52A Gate charge: 60nC Reverse recovery time: 120ns On-state resistance: 50mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 300W Case: TO247-3 Kind of channel: enhancement Type of transistor: P-MOSFET |
auf Bestellung 149 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH52P10P | Hersteller : IXYS |
Description: MOSFET P-CH 100V 52A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V |
auf Bestellung 661 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH52P10P | Hersteller : IXYS |
MOSFETs -52.0 Amps -100V 0.050 Rds |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH52P10P | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 52A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH52P10P | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 52A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |