IXTH52P10P Ixys Corporation
| Anzahl | Privatkunde |
|---|---|
| 10+ | 18.73 EUR |
| 13+ | 14.02 EUR |
| 30+ | 11.17 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
10 Stücke
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Technische Details IXTH52P10P Ixys Corporation
Description: MOSFET P-CH 100V 52A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V.
Weitere Produktangebote IXTH52P10P nach Preis ab 9.04 EUR bis 20.56 EUR
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IXTH52P10P | IXYS |
 MOSFETs -52.0 Amps -100V 0.050 Rds |
auf Bestellung 306 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH52P10P | IXYS |
Description: MOSFET P-CH 100V 52A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V |
auf Bestellung 585 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH52P10P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -52A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns Technology: PolarP™ |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTH52P10P |
|
Hersteller: IXYS
MOSFETs -52.0 Amps -100V 0.050 Rds
MOSFETs -52.0 Amps -100V 0.050 Rds
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.5 EUR |
| 10+ | 14.49 EUR |
| 120+ | 10.61 EUR |
| IXTH52P10P |
|
Hersteller: IXYS
Description: MOSFET P-CH 100V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
Description: MOSFET P-CH 100V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 585 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.56 EUR |
| 30+ | 12.22 EUR |
| 60+ | 11.22 EUR |
| 120+ | 10.39 EUR |
| 510+ | 9.04 EUR |
| IXTH52P10P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarP™
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)