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IXTH58N25L2 IXYS

Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 250V; 58A; 540W; TO247-3; 400ns
Case: TO247-3
Mounting: THT
Power dissipation: 540W
Drain current: 58A
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
On-state resistance: 64mΩ
Reverse recovery time: 400ns

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Technische Details IXTH58N25L2 IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; 250V; 58A; 540W; TO247-3; 400ns, Case: TO247-3, Mounting: THT, Power dissipation: 540W, Drain current: 58A, Drain-source voltage: 250V, Type of transistor: N-MOSFET, Gate-source voltage: 20V, On-state resistance: 64mΩ, Reverse recovery time: 400ns.