IXTH60N20L2 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 30.78 EUR |
| 30+ | 20.35 EUR |
| 120+ | 19.21 EUR |
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Technische Details IXTH60N20L2 Littelfuse Inc.
Description: MOSFET N-CH 200V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V.
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns Kind of channel: enhancement Case: TO247-3 Features of semiconductor devices: linear power mosfet Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Drain-source voltage: 200V Drain current: 60A Reverse recovery time: 330ns Gate charge: 255nC On-state resistance: 45mΩ Power dissipation: 540W Polarisation: unipolar |
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