auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 29.25 EUR |
| 10+ | 28.12 EUR |
| 30+ | 19.54 EUR |
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Technische Details IXTH60N20L2 IXYS
Description: MOSFET N-CH 200V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V.
Weitere Produktangebote IXTH60N20L2 nach Preis ab 19.21 EUR bis 30.78 EUR
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IXTH60N20L2 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 200V 60A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
auf Bestellung 329 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH60N20L2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 60A 3-Pin(3+Tab) TO-247 |
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IXTH60N20L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 60A Power dissipation: 540W Case: TO247-3 On-state resistance: 45mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 330ns Anzahl je Verpackung: 1 Stücke |
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IXTH60N20L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 60A Power dissipation: 540W Case: TO247-3 On-state resistance: 45mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 330ns |
Produkt ist nicht verfügbar |