IXTH60N20X4 IXYS
Hersteller: IXYSDescription: MOSFET ULTRA X4 200V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.11 EUR |
| 30+ | 11.48 EUR |
| 120+ | 10.44 EUR |
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Technische Details IXTH60N20X4 IXYS
Description: MOSFET ULTRA X4 200V 60A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V.
Weitere Produktangebote IXTH60N20X4 nach Preis ab 11.28 EUR bis 18.27 EUR
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IXTH60N20X4 | Hersteller : IXYS |
MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-247 package, MOSFET |
auf Bestellung 165 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTH60N20X4 | Hersteller : Littelfuse |
Discrete MOSFET 60A 200V X4 TO247 |
Produkt ist nicht verfügbar |