IXTH67N10 IXYS

Description: MOSFET N-CH 100V 67A TO247, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 4V @ 4mA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.