IXTH80N20L IXYS
Hersteller: IXYSDescription: MOSFET N-CH 200V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTH80N20L IXYS
Description: MOSFET N-CH 200V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V.
Weitere Produktangebote IXTH80N20L nach Preis ab 15.73 EUR bis 24.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXTH80N20L | Hersteller : IXYS |
MOSFETs Standard Linear Power MOSFETs |
auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
IXTH80N20L | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Gate charge: 180nC On-state resistance: 32mΩ Drain current: 80A Power dissipation: 520W Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |