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Technische Details IXTH80N65X2 IXYS
Description: MOSFET N-CH 650V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7753 pF @ 25 V.
Weitere Produktangebote IXTH80N65X2 nach Preis ab 16.97 EUR bis 27.37 EUR
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IXTH80N65X2 | Hersteller : IXYS |
 Description: MOSFET N-CH 650V 80A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7753 pF @ 25 V |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTH80N65X2 | Hersteller : IXYS/Littelfuse |
N-канальний ПТ, Udss, В = 650, Id = 80 А, Rds = 40 мОм @ 40 A, 10 В, Ugs(th) = 4,5 В @ 4000 мкА, Р, Вт = 890, Тексп, °C = -55...+150, Тип монт. = вивідний,... Група товару: Транзистори Корпус: TO-247-3 Од. вим: шт Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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| IXTH80N65X2 |
MOSFET N-CH 650V 80A TO247 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXTH80N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3 Technology: X2-Class Mounting: THT Case: TO247-3 Kind of package: tube Reverse recovery time: 465ns On-state resistance: 38mΩ Drain current: 80A Gate-source voltage: ±30V Power dissipation: 890W Drain-source voltage: 650V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 137nC |
Produkt ist nicht verfügbar |