auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.77 EUR |
| 30+ | 14.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTH80N65X2 IXYS
Description: MOSFET N-CH 650V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7753 pF @ 25 V.
Weitere Produktangebote IXTH80N65X2 nach Preis ab 13.47 EUR bis 15.80 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXTH80N65X2 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 650V 80A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7753 pF @ 25 V |
auf Bestellung 301 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
IXTH80N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
|||||||
| IXTH80N65X2 | Hersteller : IXYS |
IXTH80N65X2 THT N channel transistors |
Produkt ist nicht verfügbar |