IXTH80N65X2 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7753 pF @ 25 V
auf Bestellung 281 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.61 EUR |
| 30+ | 13.96 EUR |
| 120+ | 13.41 EUR |
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Technische Details IXTH80N65X2 Littelfuse Inc.
Description: MOSFET N-CH 650V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7753 pF @ 25 V.
Weitere Produktangebote IXTH80N65X2 nach Preis ab 14.71 EUR bis 15.49 EUR
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IXTH80N65X2 | Hersteller : IXYS |
MOSFETs TO247 650V 80A N-CH X2CLASS |
auf Bestellung 243 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH80N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH80N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 137nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 465ns |
Produkt ist nicht verfügbar |