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IXTH86N25T

IXTH86N25T IXYS


littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n25t_datasheet.pdf?assetguid=ba6c182d-54be-4e7b-8aba-8a2942707f24 Hersteller: IXYS
Description: MOSFET N-CH 250V 86A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
Power Dissipation (Max): 540W (Ta)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
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Technische Details IXTH86N25T IXYS

Description: MOSFET N-CH 250V 86A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V, Power Dissipation (Max): 540W (Ta), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V.

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IXTH86N25T IXTH86N25T Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_IXT_86N25T_Datasheet.PDF MOSFETs TO247 250V 86A N-CH TRENCH
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