IXTK102N65X2 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 650V 102A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 29.44 EUR |
| 25+ | 18.41 EUR |
| 100+ | 17.62 EUR |
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Technische Details IXTK102N65X2 IXYS
Description: MOSFET N-CH 650V 102A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V.
Weitere Produktangebote IXTK102N65X2 nach Preis ab 25.2 EUR bis 30.92 EUR
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IXTK102N65X2 | Hersteller : IXYS |
MOSFETs TO264 650V 102A N-CH X2CLASS |
auf Bestellung 262 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK102N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 102A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXTK102N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 102A 3-Pin(3+Tab) TO-264 |
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IXTK102N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 102A Power dissipation: 1.04kW Case: TO264 On-state resistance: 30mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 450ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTK102N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 102A Power dissipation: 1.04kW Case: TO264 On-state resistance: 30mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 450ns |
Produkt ist nicht verfügbar |