IXTK120N20P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 200V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 300+ | 12.24 EUR |
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Technische Details IXTK120N20P Littelfuse Inc.
Description: MOSFET N-CH 200V 120A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V, Power Dissipation (Max): 714W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Weitere Produktangebote IXTK120N20P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTK120N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264 Case: TO264 Mounting: THT Drain-source voltage: 200V Drain current: 120A On-state resistance: 22mΩ Type of transistor: N-MOSFET Reverse recovery time: 180ns Power dissipation: 714W Polarisation: unipolar Kind of package: tube Gate charge: 152nC Technology: PolarHT™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTK120N20P | Hersteller : IXYS |
MOSFETs 120 Amps 200V 0.022 Rds |
Produkt ist nicht verfügbar |
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IXTK120N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264 Case: TO264 Mounting: THT Drain-source voltage: 200V Drain current: 120A On-state resistance: 22mΩ Type of transistor: N-MOSFET Reverse recovery time: 180ns Power dissipation: 714W Polarisation: unipolar Kind of package: tube Gate charge: 152nC Technology: PolarHT™ Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |