auf Bestellung 284 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 56.06 EUR |
| 10+ | 50.39 EUR |
| 25+ | 46.98 EUR |
| 50+ | 45.53 EUR |
| 100+ | 44.04 EUR |
| 250+ | 41.83 EUR |
| 500+ | 40.64 EUR |
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Technische Details IXTK120N65X2 IXYS
Description: MOSFET N-CH 650V 120A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Weitere Produktangebote IXTK120N65X2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXTK120N65X2 | Hersteller : IXYS SEMICONDUCTOR |
 Description: IXYS SEMICONDUCTOR - IXTK120N65X2 - Leistungs-MOSFET, Klasse X2, n-Kanal, 650 V, 120 A, 0.023 ohm, TO-264P, DurchsteckmontagetariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 1.25kW Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.023ohm |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTK120N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 120A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXTK120N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 120A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXTK120N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 505ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTK120N65X2 | Hersteller : IXYS |
Description: MOSFET N-CH 650V 120A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTK120N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 505ns |
Produkt ist nicht verfügbar |