IXTK128N15 IXYS

Description: MOSFET N-CH 150V 128A TO264, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 540W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 128A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA.