
IXTK170N10P IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Drain current: 170A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 715W
Polarisation: unipolar
Kind of package: tube
Gate charge: 198nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 120ns
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 319 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
6+ | 12.26 EUR |
7+ | 10.38 EUR |
25+ | 10.28 EUR |
100+ | 9.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTK170N10P IXYS
Description: MOSFET N-CH 100V 170A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V, Power Dissipation (Max): 715W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Weitere Produktangebote IXTK170N10P nach Preis ab 9.98 EUR bis 12.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IXTK170N10P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264 Drain current: 170A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 715W Polarisation: unipolar Kind of package: tube Gate charge: 198nC Technology: Polar™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO264 Reverse recovery time: 120ns Drain-source voltage: 100V |
auf Bestellung 319 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IXTK170N10P | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
IXTK170N10P | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
IXTK170N10P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Power Dissipation (Max): 715W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-264 (IXTK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
IXTK170N10P | Hersteller : IXYS |
![]() |
Produkt ist nicht verfügbar |