Technische Details IXTK210P10T Littelfuse Inc.
Category: THT P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W, Mounting: THT, Kind of channel: enhancement, Technology: TrenchP™, Type of transistor: P-MOSFET, Case: TO264, Kind of package: tube, Drain-source voltage: -100V, Drain current: -210A, Reverse recovery time: 200ns, Gate charge: 740nC, On-state resistance: 7.5mΩ, Gate-source voltage: ±15V, Power dissipation: 1.04kW, Polarisation: unipolar.
Weitere Produktangebote IXTK210P10T nach Preis ab 33.39 EUR bis 71.5 EUR
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IXTK210P10T | Hersteller : IXYS |
 Description: MOSFET P-CH -100V -210A TO-264Packaging: Tube |
auf Bestellung 1447 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK210P10T | Hersteller : IXYS |
MOSFETs TrenchP Power MOSFETs |
auf Bestellung 1303 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK210P10T | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Mounting: THT Kind of channel: enhancement Technology: TrenchP™ Type of transistor: P-MOSFET Case: TO264 Kind of package: tube Drain-source voltage: -100V Drain current: -210A Reverse recovery time: 200ns Gate charge: 740nC On-state resistance: 7.5mΩ Gate-source voltage: ±15V Power dissipation: 1.04kW Polarisation: unipolar |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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