| Anzahl | Privatkunde |
|---|---|
| 1+ | 41.55 EUR |
| 10+ | 33.05 EUR |
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Technische Details IXTK32P60P IXYS
Description: MOSFET P-CH 600V 32A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V.
Weitere Produktangebote IXTK32P60P nach Preis ab 28.41 EUR bis 49.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTK32P60P | IXYS |
 Description: MOSFET P-CH 600V 32A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-264 (IXTK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
auf Bestellung 361 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK32P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264 Power dissipation: 890W Gate charge: 196nC Polarisation: unipolar Technology: PolarP™ Drain current: -32A Kind of channel: enhancement Drain-source voltage: -600V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 0.35Ω Reverse recovery time: 480ns Mounting: THT |
auf Bestellung 202 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTK32P60P |
|
Hersteller: IXYS
Description: MOSFET P-CH 600V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Description: MOSFET P-CH 600V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
auf Bestellung 361 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 49.66 EUR |
| 25+ | 32.49 EUR |
| 50+ | 30.27 EUR |
| 100+ | 28.41 EUR |
| IXTK32P60P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Power dissipation: 890W
Gate charge: 196nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 0.35Ω
Reverse recovery time: 480ns
Mounting: THT
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Power dissipation: 890W
Gate charge: 196nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 0.35Ω
Reverse recovery time: 480ns
Mounting: THT
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)