IXTK32P60P IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Case: TO264
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 283 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 19.96 EUR |
| 25+ | 19.29 EUR |
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Technische Details IXTK32P60P IXYS
Description: MOSFET P-CH 600V 32A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V.
Weitere Produktangebote IXTK32P60P nach Preis ab 19.29 EUR bis 34.85 EUR
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IXTK32P60P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264 Case: TO264 Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -32A On-state resistance: 0.35Ω Type of transistor: P-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Gate charge: 196nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
auf Bestellung 283 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTK32P60P | Hersteller : IXYS |
MOSFETs -32 Amps -600V 0.350 Rds |
auf Bestellung 1132 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK32P60P | Hersteller : Littelfuse Inc. |
Description: MOSFET P-CH 600V 32A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-264 (IXTK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK32P60P | Hersteller : Littelfuse |
Trans MOSFET P-CH 600V 32A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXTK32P60P | Hersteller : Littelfuse |
Trans MOSFET P-CH 600V 32A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |