auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 130.22 EUR |
| 10+ | 115.91 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTK3N250L IXYS
Description: MOSFET N-CH 2500V 3A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2500 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V.
Weitere Produktangebote IXTK3N250L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTK3N250L | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; TO264; 370ns Case: TO264 Mounting: THT Kind of package: tube Drain current: 3A Power dissipation: 417W Drain-source voltage: 2.5kV Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 230nC Reverse recovery time: 370ns On-state resistance: 10Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
| IXTK3N250L | Hersteller : IXYS |
Description: MOSFET N-CH 2500V 3A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-264 (IXTK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 2500 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
Produkt ist nicht verfügbar |
||
|
|
IXTK3N250L | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; TO264; 370ns Case: TO264 Mounting: THT Kind of package: tube Drain current: 3A Power dissipation: 417W Drain-source voltage: 2.5kV Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 230nC Reverse recovery time: 370ns On-state resistance: 10Ω |
Produkt ist nicht verfügbar |