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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 122.07 EUR |
| 10+ | 114.12 EUR |
| 25+ | 105.49 EUR |
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Technische Details IXTK3N250L IXYS
Description: MOSFET N-CH 2500V 3A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2500 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V.
Weitere Produktangebote IXTK3N250L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXTK3N250L | Hersteller : IXYS |
 IXTK3N250L THT N channel transistors |
Produkt ist nicht verfügbar |
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| IXTK3N250L | Hersteller : IXYS |
Description: MOSFET N-CH 2500V 3A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-264 (IXTK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 2500 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
Produkt ist nicht verfügbar |