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IXTK600N04T2

IXTK600N04T2 IXYS


littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_600n04t2_datasheet.pdf.pdf Hersteller: IXYS
Description: MOSFET N-CH 40V 600A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
auf Bestellung 675 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+27.09 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTK600N04T2 IXYS

Description: MOSFET N-CH 40V 600A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.

Weitere Produktangebote IXTK600N04T2 nach Preis ab 27.23 EUR bis 38.83 EUR

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IXTK600N04T2 IXTK600N04T2 Hersteller : IXYS media-3319900.pdf MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET
auf Bestellung 322 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.83 EUR
10+34.51 EUR
25+34.48 EUR
100+30.17 EUR
250+27.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTK600N04T2 IXTK600N04T2 Hersteller : Littelfuse mosfets_n-channel_trench_gate_ixt_600n04t2_datasheet.pdf.pdf Trans MOSFET N-CH 40V 600A 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
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IXTK600N04T2 IXTK600N04T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXTK600N04T2 IXTK600N04T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH