auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 160.97 EUR |
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Technische Details IXTL2N470 IXYS
Description: MOSFET N-CH 4700V 2A I5PAK, Packaging: Tube, Package / Case: ISOPLUSi5-Pak™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V, Power Dissipation (Max): 220W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: ISOPLUSi5-Pak™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 4700 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V.
Weitere Produktangebote IXTL2N470 nach Preis ab 147.4 EUR bis 165.65 EUR
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IXTL2N470 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 4700V 2A I5PAK Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 6V @ 250µA Supplier Device Package: ISOPLUSi5-Pak™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4700 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V |
auf Bestellung 817 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTL2N470 | Hersteller : IXYS | IXTL2N470 THT N channel transistors |
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