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Technische Details IXTL2N470 IXYS
Description: MOSFET N-CH 4700V 2A I5PAK, Packaging: Tube, Package / Case: ISOPLUSi5-Pak™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V, Power Dissipation (Max): 220W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: ISOPLUSi5-Pak™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 4700 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V.
Weitere Produktangebote IXTL2N470
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTL2N470 | Hersteller : Littelfuse |
 High Voltage Power MOSFET |
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IXTL2N470 | Hersteller : IXYS |
Description: MOSFET N-CH 4700V 2A I5PAK Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 6V @ 250µA Supplier Device Package: ISOPLUSi5-Pak™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4700 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IXTL2N470 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.7kV Drain current: 2A Power dissipation: 220W Case: ISOPLUS i5-pac™ On-state resistance: 20Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs |
Produkt ist nicht verfügbar |