IXTN120P20T IXYS
Hersteller: IXYS
Description: MOSFET P-CH 200V 106A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Technische Details IXTN120P20T IXYS
Description: MOSFET P-CH 200V 106A SOT227B, Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote IXTN120P20T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXTN120P20T | Littelfuse |
Trans MOSFET P-CH 200V 106A 4-Pin SOT-227B |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTN120P20T |
|
Hersteller: Littelfuse
Trans MOSFET P-CH 200V 106A 4-Pin SOT-227B
Trans MOSFET P-CH 200V 106A 4-Pin SOT-227B
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)