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IXTN120P20T

IXTN120P20T IXYS

littelfuse_discrete_mosfets_p-channel_ixtn120p20t_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET P-CH 200V 106A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+84.97 EUR
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Technische Details IXTN120P20T IXYS

Description: MOSFET P-CH 200V 106A SOT227B, Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.

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IXTN120P20T IXTN120P20T IXYS media-3321572.pdf Discrete Semiconductor Modules TrenchP Power MOSFET
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IXTN120P20T IXTN120P20T IXYS IXTN120P20T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 830W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN120P20T media-3321572.pdf
IXTN120P20T
Hersteller: IXYS
Discrete Semiconductor Modules TrenchP Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN120P20T IXTN120P20T.pdf
IXTN120P20T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 830W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH