auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 53.01 EUR |
| 10+ | 44.33 EUR |
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Produktbewertung abgeben
Technische Details IXTN170P10P IXYS
Description: MOSFET P-CH 100V 170A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V.
Weitere Produktangebote IXTN170P10P nach Preis ab 39.28 EUR bis 59.35 EUR
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IXTN170P10P | Hersteller : Littelfuse Inc. |
 Description: MOSFET P-CH 100V 170A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V |
auf Bestellung 286 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN170P10P | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXTN170P10P - MOSFET, P-CH, 100V, 170A, SOT-227 tariffCode: 0 Transistormontage: Module Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 890W Bauform - Transistor: SOT-227 Anzahl der Pins: 4Pin(s) Produktpalette: PolarP Series productTraceability: Yes-Date/Lot Code Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.014ohm directShipCharge: 25 |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN170P10P | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 170A 4-Pin SOT-227B |
auf Bestellung 144 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN170P10P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A Technology: PolarP™ Mechanical mounting: screw Semiconductor structure: single transistor Pulsed drain current: -510A Drain-source voltage: -100V Drain current: -170A Gate charge: 240nC Reverse recovery time: 176ns On-state resistance: 14mΩ Polarisation: unipolar Gate-source voltage: ±30V Power dissipation: 890W Electrical mounting: screw Case: SOT227B Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXTN170P10P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A Technology: PolarP™ Mechanical mounting: screw Semiconductor structure: single transistor Pulsed drain current: -510A Drain-source voltage: -100V Drain current: -170A Gate charge: 240nC Reverse recovery time: 176ns On-state resistance: 14mΩ Polarisation: unipolar Gate-source voltage: ±30V Power dissipation: 890W Electrical mounting: screw Case: SOT227B Kind of channel: enhancement Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |