| Anzahl | Privatkunde |
|---|---|
| 20+ | 70.72 EUR |
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Technische Details IXTN200N10L2 Littelfuse
Description: MOSFET N-CH 100V 178A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 178A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V.
Weitere Produktangebote IXTN200N10L2 nach Preis ab 78.87 EUR bis 115.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IXTN200N10L2 | Littelfuse |
 Trans MOSFET N-CH 100V 178A 4-Pin SOT-227 |
auf Bestellung 291 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN200N10L2 | IXYS |
MOSFET Modules Linear L2 Pwr MOSFET w/Extended FBSOA |
auf Bestellung 330 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN200N10L2 | IXYS |
Description: MOSFET N-CH 100V 178A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 178A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V |
auf Bestellung 2131 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXTN200N10L2 |
|
Hersteller: Littelfuse
Trans MOSFET N-CH 100V 178A 4-Pin SOT-227
Trans MOSFET N-CH 100V 178A 4-Pin SOT-227
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 109.15 EUR |
| 25+ | 89.56 EUR |
| 50+ | 84.49 EUR |
| 75+ | 82.41 EUR |
| 150+ | 80.92 EUR |
| IXTN200N10L2 |
|
Hersteller: IXYS
MOSFET Modules Linear L2 Pwr MOSFET w/Extended FBSOA
MOSFET Modules Linear L2 Pwr MOSFET w/Extended FBSOA
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 109.52 EUR |
| 10+ | 87.06 EUR |
| IXTN200N10L2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 2131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 115.82 EUR |
| 10+ | 88.06 EUR |
| 50+ | 78.87 EUR |