IXTN210P10T IXYS
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Technology: TrenchP™
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Case: SOT227B
Power dissipation: 830W
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: -800A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Technology: TrenchP™
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Case: SOT227B
Power dissipation: 830W
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: -800A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 53.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTN210P10T IXYS
Description: IXYS SEMICONDUCTOR - IXTN210P10T - MOSFET-Transistor, p-Kanal, 210A, 100V, 0.0075 Ohm, 10V, 4.5V, SOT-227B, tariffCode: 85412900, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 210A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Verlustleistung Pd: 830W, Gate-Source-Schwellenspannung, max.: 4.5V, euEccn: NLR, Verlustleistung: 830W, Produktpalette: TrenchP, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: p-Kanal, Kanaltyp: p-Kanal, Betriebswiderstand, Rds(on): 0.0075ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0075ohm, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote IXTN210P10T nach Preis ab 53.28 EUR bis 121.47 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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IXTN210P10T | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A Technology: TrenchP™ Reverse recovery time: 200ns Semiconductor structure: single transistor Case: SOT227B Power dissipation: 830W Drain-source voltage: -100V Drain current: -210A On-state resistance: 7.5mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 740nC Kind of channel: enhanced Gate-source voltage: ±15V Pulsed drain current: -800A |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN210P10T | Hersteller : IXYS |
Description: MOSFET P-CH 100V 210A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V |
auf Bestellung 107 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN210P10T | Hersteller : IXYS | Discrete Semiconductor Modules TrenchP Channel Power MOSFETs |
auf Bestellung 1 Stücke: Lieferzeit 14-28 Tag (e) |
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IXTN210P10T | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXTN210P10T - MOSFET-Transistor, p-Kanal, 210A, 100V, 0.0075 Ohm, 10V, 4.5V, SOT-227B tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 210A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 830W Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 830W Produktpalette: TrenchP productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0075ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0075ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN210P10T | Hersteller : Littelfuse | Trans MOSFET P-CH 100V 210A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |