auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 87.38 EUR |
| 10+ | 84.36 EUR |
| 20+ | 81.54 EUR |
| 50+ | 80.27 EUR |
| 100+ | 79.48 EUR |
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Technische Details IXTN22N100L IXYS
Description: MOSFET N-CH 1000V 22A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V.
Weitere Produktangebote IXTN22N100L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXTN22N100L | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 22A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXTN22N100L | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W Technology: Linear™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Pulsed drain current: 50A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.6Ω Gate charge: 0.27µC Kind of channel: enhancement Mechanical mounting: screw Type of module: MOSFET transistor Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 1µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTN22N100L | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 22A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTN22N100L | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W Technology: Linear™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Pulsed drain current: 50A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.6Ω Gate charge: 0.27µC Kind of channel: enhancement Mechanical mounting: screw Type of module: MOSFET transistor Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 1µs |
Produkt ist nicht verfügbar |