| Anzahl | Privatkunde |
|---|---|
| 1+ | 124.15 EUR |
| 10+ | 105.81 EUR |
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Technische Details IXTN22N100L IXYS
Description: MOSFET N-CH 1000V 22A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V.
Weitere Produktangebote IXTN22N100L nach Preis ab 89.42 EUR bis 150.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTN22N100L | IXYS |
 Description: MOSFET N-CH 1000V 22A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V |
auf Bestellung 586 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN22N100L | LITTELFUSE |
Description: LITTELFUSE - IXTN22N100L - MOSFET-Transistor, n-Kanal, 22 A, 1 kV, 0.6 ohm, 20 V, 5.5 V tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 22A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 5.5V Verlustleistung: 700W SVHC: No SVHC (25-Jun-2025) Produktpalette: Linear Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal usEccn: EAR99 Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 20V Drain-Source-Durchgangswiderstand: 0.6ohm |
auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTN22N100L |
|
Hersteller: IXYS
Description: MOSFET N-CH 1000V 22A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
Description: MOSFET N-CH 1000V 22A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
auf Bestellung 586 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 126.76 EUR |
| 10+ | 97.27 EUR |
| 50+ | 89.42 EUR |
| IXTN22N100L |
|
Hersteller: LITTELFUSE
Description: LITTELFUSE - IXTN22N100L - MOSFET-Transistor, n-Kanal, 22 A, 1 kV, 0.6 ohm, 20 V, 5.5 V
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1kV
rohsCompliant: YES
Dauer-Drainstrom Id: 22A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.5V
Verlustleistung: 700W
SVHC: No SVHC (25-Jun-2025)
Produktpalette: Linear Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.6ohm
Description: LITTELFUSE - IXTN22N100L - MOSFET-Transistor, n-Kanal, 22 A, 1 kV, 0.6 ohm, 20 V, 5.5 V
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1kV
rohsCompliant: YES
Dauer-Drainstrom Id: 22A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.5V
Verlustleistung: 700W
SVHC: No SVHC (25-Jun-2025)
Produktpalette: Linear Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.6ohm
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 150.74 EUR |
| 5+ | 137.03 EUR |
| 10+ | 107.36 EUR |
| 50+ | 93.58 EUR |