auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 112.52 EUR |
| 10+ | 110.02 EUR |
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Technische Details IXTN30N100L IXYS
Description: MOSFET N-CH 1000V 30A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V.
Weitere Produktangebote IXTN30N100L nach Preis ab 91.88 EUR bis 119.19 EUR
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IXTN30N100L | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 30A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V |
auf Bestellung 588 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN30N100L | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227B |
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IXTN30N100L | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 70A Power dissipation: 800W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.45Ω Gate charge: 545nC Kind of channel: enhancement Reverse recovery time: 1µs Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Technology: Linear™ Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTN30N100L | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 70A Power dissipation: 800W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.45Ω Gate charge: 545nC Kind of channel: enhancement Reverse recovery time: 1µs Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Technology: Linear™ Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |