auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 43.01 EUR |
| 10+ | 42.15 EUR |
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Technische Details IXTN32P60P IXYS
Description: MOSFET P-CH 600V 32A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V.
Weitere Produktangebote IXTN32P60P nach Preis ab 49.50 EUR bis 62.85 EUR
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IXTN32P60P | Hersteller : IXYS |
 Description: MOSFET P-CH 600V 32A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN32P60P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A Case: SOT227B Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Gate charge: 196nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: -96A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -32A On-state resistance: 0.35Ω Power dissipation: 890W Anzahl je Verpackung: 1 Stücke |
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IXTN32P60P | Hersteller : Littelfuse |
Trans MOSFET P-CH 600V 32A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXTN32P60P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A Case: SOT227B Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Gate charge: 196nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: -96A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -32A On-state resistance: 0.35Ω Power dissipation: 890W |
Produkt ist nicht verfügbar |