auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.3 EUR |
| 10+ | 61.93 EUR |
| 100+ | 54.17 EUR |
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Technische Details IXTN550N055T2 IXYS
Description: MOSFET N-CH 55V 550A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Power Dissipation (Max): 940W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.
Weitere Produktangebote IXTN550N055T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTN550N055T2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 55V 550A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXTN550N055T2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA Technology: GigaMOS™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Pulsed drain current: 1.65kA Power dissipation: 940W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 1.3mΩ Gate charge: 595nC Kind of channel: enhancement Reverse recovery time: 100ns Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTN550N055T2 | Hersteller : IXYS |
Description: MOSFET N-CH 55V 550A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 550A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 940W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTN550N055T2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA Technology: GigaMOS™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Pulsed drain current: 1.65kA Power dissipation: 940W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 1.3mΩ Gate charge: 595nC Kind of channel: enhancement Reverse recovery time: 100ns Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |