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IXTN550N055T2

IXTN550N055T2 IXYS


media-3320494.pdf Hersteller: IXYS
MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET
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Lieferzeit 10-14 Tag (e)
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10+68.41 EUR
100+59.84 EUR
250+55.84 EUR
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Technische Details IXTN550N055T2 IXYS

Description: MOSFET N-CH 55V 550A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Power Dissipation (Max): 940W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.

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IXTN550N055T2 IXTN550N055T2 Hersteller : Littelfuse osfets_n-channel_trench_gate_ixtn550n055t2_datasheet.pdf.pdf Trans MOSFET N-CH 55V 550A 4-Pin SOT-227B
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IXTN550N055T2 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn550n055t2_datasheet.pdf.pdf IXTN550N055T2 Transistor modules MOSFET
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IXTN550N055T2 IXTN550N055T2 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn550n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 550A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH