IXTN600N04T2 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 40V 600A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 53.89 EUR |
| 10+ | 40.69 EUR |
| 100+ | 36.09 EUR |
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Technische Details IXTN600N04T2 Littelfuse Inc.
Description: MOSFET N-CH 40V 600A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V, Power Dissipation (Max): 940W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.
Weitere Produktangebote IXTN600N04T2 nach Preis ab 43.28 EUR bis 60.72 EUR
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IXTN600N04T2 | Hersteller : IXYS |
Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET |
auf Bestellung 811 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN600N04T2 | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXTN600N04T2 - MOSFET, N-CH, 40V, 600A, SOT-227 Transistormontage: Module Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 600 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 940 Bauform - Transistor: SOT-227 Anzahl der Pins: 4 Produktpalette: TrenchT2 GigaMOS Series Wandlerpolarität: N Channel Betriebswiderstand, Rds(on): 0.0013 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 3.5 SVHC: To Be Advised |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN600N04T2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA Semiconductor structure: single transistor Reverse recovery time: 100ns Drain-source voltage: 40V Drain current: 600A On-state resistance: 1.3mΩ Power dissipation: 940W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Gate charge: 590nC Technology: GigaMOS™; TrenchT2™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 1.8kA Type of semiconductor module: MOSFET transistor Case: SOT227B Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTN600N04T2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA Semiconductor structure: single transistor Reverse recovery time: 100ns Drain-source voltage: 40V Drain current: 600A On-state resistance: 1.3mΩ Power dissipation: 940W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Gate charge: 590nC Technology: GigaMOS™; TrenchT2™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 1.8kA Type of semiconductor module: MOSFET transistor Case: SOT227B |
Produkt ist nicht verfügbar |