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IXTN600N04T2

IXTN600N04T2 Littelfuse Inc.


littelfuse-discrete-mosfets-ixtn600n04t2-datasheet?assetguid=ce9fe6c5-553e-48d1-b7ff-931b370a3ea5 Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 40V 600A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
auf Bestellung 192 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+53.89 EUR
10+40.69 EUR
100+36.09 EUR
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Technische Details IXTN600N04T2 Littelfuse Inc.

Description: MOSFET N-CH 40V 600A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V, Power Dissipation (Max): 940W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.

Weitere Produktangebote IXTN600N04T2 nach Preis ab 43.28 EUR bis 60.72 EUR

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IXTN600N04T2 IXTN600N04T2 Hersteller : IXYS media-3323100.pdf Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.72 EUR
10+53.96 EUR
100+47.20 EUR
200+47.19 EUR
1000+43.31 EUR
2000+43.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTN600N04T2 IXTN600N04T2 Hersteller : LITTELFUSE littelfuse-discrete-mosfets-ixtn600n04t2-datasheet?assetguid=ce9fe6c5-553e-48d1-b7ff-931b370a3ea5 Description: LITTELFUSE - IXTN600N04T2 - MOSFET, N-CH, 40V, 600A, SOT-227
Transistormontage: Module
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 600
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 940
Bauform - Transistor: SOT-227
Anzahl der Pins: 4
Produktpalette: TrenchT2 GigaMOS Series
Wandlerpolarität: N Channel
Betriebswiderstand, Rds(on): 0.0013
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 3.5
SVHC: To Be Advised
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IXTN600N04T2 IXTN600N04T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF5F55F2CE31820&compId=IXTN600N04T2.pdf?ci_sign=21248338ae2fa9deea23c6d6848e893366c6ced4 Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN600N04T2 IXTN600N04T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF5F55F2CE31820&compId=IXTN600N04T2.pdf?ci_sign=21248338ae2fa9deea23c6d6848e893366c6ced4 Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Produkt ist nicht verfügbar
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