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IXTN60N50L2

IXTN60N50L2 IXYS


media-3321894.pdf Hersteller: IXYS
MOSFET Modules 60 Amps 500V
auf Bestellung 804 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.65 EUR
10+63.78 EUR
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Technische Details IXTN60N50L2 IXYS

Description: MOSFET N-CH 500V 53A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V, Power Dissipation (Max): 735W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V.

Weitere Produktangebote IXTN60N50L2 nach Preis ab 58.64 EUR bis 82.60 EUR

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IXTN60N50L2 IXTN60N50L2 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_linear_ixtn60n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 53A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+82.60 EUR
10+62.38 EUR
100+58.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTN60N50L2 IXTN60N50L2 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 500V 53A 4-Pin SOT-227B
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IXTN60N50L2 IXTN60N50L2 Hersteller : IXYS IXTN60N50L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 150A
Power dissipation: 735W
Kind of channel: enhancement
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 610nC
Technology: Linear L2™
Reverse recovery time: 980ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN60N50L2 IXTN60N50L2 Hersteller : IXYS IXTN60N50L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 150A
Power dissipation: 735W
Kind of channel: enhancement
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 610nC
Technology: Linear L2™
Reverse recovery time: 980ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH