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Technische Details IXTN60N50L2 IXYS
Description: MOSFET N-CH 500V 53A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V, Power Dissipation (Max): 735W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V.
Weitere Produktangebote IXTN60N50L2 nach Preis ab 69.45 EUR bis 82.17 EUR
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IXTN60N50L2 | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 53A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V Power Dissipation (Max): 735W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V |
auf Bestellung 2224 Stücke: Lieferzeit 10-14 Tag (e) |
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