auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 82.54 EUR |
| 10+ | 67.23 EUR |
| 100+ | 63.78 EUR |
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Technische Details IXTN60N50L2 IXYS
Description: MOSFET N-CH 500V 53A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V, Power Dissipation (Max): 735W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V.
Weitere Produktangebote IXTN60N50L2 nach Preis ab 58.64 EUR bis 82.6 EUR
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IXTN60N50L2 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 500V 53A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V Power Dissipation (Max): 735W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V |
auf Bestellung 668 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN60N50L2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 53A 4-Pin SOT-227B |
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IXTN60N50L2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A Polarisation: unipolar Drain-source voltage: 500V Drain current: 53A Pulsed drain current: 150A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.1Ω Gate charge: 610nC Kind of channel: enhancement Reverse recovery time: 980ns Technology: Linear L2™ Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |