auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 118.20 EUR |
| 10+ | 105.00 EUR |
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Technische Details IXTN62N50L IXYS
Description: MOSFET N-CH 500V 62A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V.
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IXTN62N50L Produktcode: 29989
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 Transistoren > MOSFET N-CH |
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IXTN62N50L | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 62A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXTN62N50L | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 62A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.1Ω Pulsed drain current: 150A Power dissipation: 800W Kind of channel: enhancement Gate-source voltage: ±40V Mechanical mounting: screw Gate charge: 550nC Technology: Linear™ Reverse recovery time: 0.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTN62N50L | Hersteller : IXYS |
Description: MOSFET N-CH 500V 62A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 20V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTN62N50L | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 62A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.1Ω Pulsed drain current: 150A Power dissipation: 800W Kind of channel: enhancement Gate-source voltage: ±40V Mechanical mounting: screw Gate charge: 550nC Technology: Linear™ Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |