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IXTN62N50L

IXTN62N50L IXYS


media-3321146.pdf Hersteller: IXYS
MOSFET Modules 62 Amps 500V
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Lieferzeit 10-14 Tag (e)
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1+118.2 EUR
10+105 EUR
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Technische Details IXTN62N50L IXYS

Description: MOSFET N-CH 500V 62A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V.

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IXTN62N50L IXTN62N50L
Produktcode: 29989
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littelfuse_discrete_mosfets_n-channel_linear_ixtn62n50l_datasheet.pdf.pdf Transistoren > MOSFET N-CH
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IXTN62N50L IXTN62N50L Hersteller : Littelfuse screte_mosfets_n-channel_linear_ixtn62n50l_datasheet.pdf.pdf Trans MOSFET N-CH 500V 62A 4-Pin SOT-227B
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IXTN62N50L IXTN62N50L Hersteller : IXYS IXTN62N50L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 62A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 150A
Power dissipation: 800W
Kind of channel: enhancement
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 550nC
Technology: Linear™
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
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IXTN62N50L IXTN62N50L Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_linear_ixtn62n50l_datasheet.pdf.pdf Description: MOSFET N-CH 500V 62A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN62N50L IXTN62N50L Hersteller : IXYS IXTN62N50L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 62A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 150A
Power dissipation: 800W
Kind of channel: enhancement
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 550nC
Technology: Linear™
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH