Weitere Produktangebote IXTN62N50L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTN62N50L | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 62A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|
 |
IXTN62N50L | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A Polarisation: unipolar Power dissipation: 800W Case: SOT227B On-state resistance: 0.1Ω Electrical mounting: screw Mechanical mounting: screw Gate charge: 550nC Technology: Linear™ Kind of channel: enhancement Gate-source voltage: ±40V Pulsed drain current: 150A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 62A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IXTN62N50L | Hersteller : IXYS |
Description: MOSFET N-CH 500V 62A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 20V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
IXTN62N50L | Hersteller : IXYS |
MOSFET Modules 62 Amps 500V |
Produkt ist nicht verfügbar |
|
|
|
IXTN62N50L | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A Polarisation: unipolar Power dissipation: 800W Case: SOT227B On-state resistance: 0.1Ω Electrical mounting: screw Mechanical mounting: screw Gate charge: 550nC Technology: Linear™ Kind of channel: enhancement Gate-source voltage: ±40V Pulsed drain current: 150A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 62A |
Produkt ist nicht verfügbar |