IXTN80N30L2 IXYS

Category: Transistor modules MOSFET, Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 300V, Drain current: 80A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 38mΩ, Pulsed drain current: 200A, Power dissipation: 735W, Technology: Linear L2™, Kind of channel: enhancement, Gate charge: 660nC, Reverse recovery time: 485ns, Gate-source voltage: ±30V, Mechanical mounting: screw.