auf Bestellung 553 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 55.33 EUR |
| 10+ | 41.04 EUR |
| 100+ | 40.34 EUR |
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Technische Details IXTN90P20P IXYS
Description: MOSFET P-CH 200V 90A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXTN90P20P nach Preis ab 36.78 EUR bis 55.58 EUR
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IXTN90P20P | Hersteller : IXYS |
 Description: MOSFET P-CH 200V 90A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN90P20P | Hersteller : Littelfuse |
Trans MOSFET P-CH 200V 90A 4-Pin SOT-227B |
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IXTN90P20P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A Case: SOT227B Polarisation: unipolar Pulsed drain current: -270A Drain-source voltage: -200V Drain current: -90A Electrical mounting: screw Gate charge: 205nC Reverse recovery time: 315ns On-state resistance: 44mΩ Semiconductor structure: single transistor Technology: PolarP™ Gate-source voltage: ±30V Type of semiconductor module: MOSFET transistor Power dissipation: 890W Kind of channel: enhancement Mechanical mounting: screw |
Produkt ist nicht verfügbar |