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Technische Details IXTP01N100D Littelfuse
Description: MOSFET N-CH 1000V 400MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V, Power Dissipation (Max): 1.1W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V.
Weitere Produktangebote IXTP01N100D nach Preis ab 6.7 EUR bis 18.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTP01N100D | IXYS |
 MOSFETs 0.1 Amps 1000V 110 Rds |
auf Bestellung 307 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP01N100D | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220AB Mounting: THT Gate charge: 0.1µC Drain current: 0.1A Kind of channel: depletion Drain-source voltage: 1kV Kind of package: tube On-state resistance: 80Ω Reverse recovery time: 2ns |
auf Bestellung 282 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP01N100D | Littelfuse |
Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220 |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP01N100D | IXYS |
Description: MOSFET N-CH 1000V 400MA TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 25µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP01N100D | Ixys Corporation |
Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220 |
auf Bestellung 286 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTP01N100D |
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Hersteller: IXYS
MOSFETs 0.1 Amps 1000V 110 Rds
MOSFETs 0.1 Amps 1000V 110 Rds
auf Bestellung 307 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.92 EUR |
| IXTP01N100D |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Gate charge: 0.1µC
Drain current: 0.1A
Kind of channel: depletion
Drain-source voltage: 1kV
Kind of package: tube
On-state resistance: 80Ω
Reverse recovery time: 2ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Gate charge: 0.1µC
Drain current: 0.1A
Kind of channel: depletion
Drain-source voltage: 1kV
Kind of package: tube
On-state resistance: 80Ω
Reverse recovery time: 2ns
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 11.39 EUR |
| 10+ | 10.34 EUR |
| 50+ | 6.7 EUR |
| IXTP01N100D |
|
Hersteller: Littelfuse
Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220
Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 300+ | 12.29 EUR |
| IXTP01N100D |
|
Hersteller: IXYS
Description: MOSFET N-CH 1000V 400MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 1000V 400MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.99 EUR |
| 10+ | 12.32 EUR |
| 50+ | 9.89 EUR |
| 100+ | 9.12 EUR |
| IXTP01N100D |
|
Hersteller: Ixys Corporation
Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220
Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 18.41 EUR |
| 11+ | 16.49 EUR |
| 50+ | 10.45 EUR |