| Anzahl | Preis |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 2.97 EUR |
| 100+ | 2.16 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.56 EUR |
| 2500+ | 1.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTP02N50D IXYS
Description: MOSFET N-CH 500V 200MA TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 25µA, Power Dissipation (Max): 1.1W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP02N50D
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXTP02N50D |
 N-Channel, Depletion Mode, 500V, 200mA, 30 Ohm, TO-220 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
|||
 |
IXTP02N50D | Hersteller : IXYS |
Description: MOSFET N-CH 500V 200MA TO220AB Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 25µA Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) FET Type: N-Channel, Depletion Mode Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |