auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.08 EUR |
| 50+ | 4.07 EUR |
| 100+ | 3.41 EUR |
| 250+ | 2.8 EUR |
| 500+ | 2.62 EUR |
| 1000+ | 2.48 EUR |
| 2500+ | 2.45 EUR |
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Technische Details IXTP02N50D IXYS
Description: MOSFET N-CH 500V 200MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V, Power Dissipation (Max): 1.1W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 5V @ 25µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V.
Weitere Produktangebote IXTP02N50D
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXTP02N50D | Hersteller : Littelfuse |
 Trans MOSFET N-CH Si 500V 0.2A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP02N50D | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220AB Mounting: THT Kind of package: tube On-state resistance: 30Ω Gate charge: 0.12µC Kind of channel: depletion Reverse recovery time: 5ns Drain-source voltage: 500V Drain current: 0.2A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTP02N50D | Hersteller : IXYS |
Description: MOSFET N-CH 500V 200MA TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 25µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTP02N50D | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220AB Mounting: THT Kind of package: tube On-state resistance: 30Ω Gate charge: 0.12µC Kind of channel: depletion Reverse recovery time: 5ns Drain-source voltage: 500V Drain current: 0.2A |
Produkt ist nicht verfügbar |