auf Bestellung 293 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.53 EUR |
| 10+ | 5.97 EUR |
| 50+ | 5.16 EUR |
| 100+ | 4.42 EUR |
| 250+ | 4.29 EUR |
| 500+ | 3.92 EUR |
| 1000+ | 3.41 EUR |
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Technische Details IXTP05N100M IXYS
Description: MOSFET N-CH 1000V 700MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IXTP05N100M nach Preis ab 3.39 EUR bis 6.58 EUR
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IXTP05N100M | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 1000V 700MA TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Tc) Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 25µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
auf Bestellung 1450 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP05N100M | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 0.7A 3-Pin(3+Tab) TO-220 |
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IXTP05N100M | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 0.7A 3-Pin(3+Tab) TO-220 |
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IXTP05N100M | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns Mounting: THT Case: TO220FP Reverse recovery time: 710ns Drain-source voltage: 1kV Drain current: 0.7A On-state resistance: 17Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTP05N100M | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns Mounting: THT Case: TO220FP Reverse recovery time: 710ns Drain-source voltage: 1kV Drain current: 0.7A On-state resistance: 17Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced |
Produkt ist nicht verfügbar |