IXTP05N100M IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1000V 700MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3+ | 7.66 EUR |
| 50+ | 3.99 EUR |
| 100+ | 3.63 EUR |
| 500+ | 3.01 EUR |
| 1000+ | 2.82 EUR |
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Technische Details IXTP05N100M IXYS
Description: MOSFET N-CH 1000V 700MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IXTP05N100M nach Preis ab 3.91 EUR bis 9.79 EUR
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IXTP05N100M | Hersteller : IXYS |
MOSFETs 0.5 Amps 1000V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP05N100M | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 0.7A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
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IXTP05N100M | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.7A Power dissipation: 25W Case: TO220FP On-state resistance: 17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 710ns |
Produkt ist nicht verfügbar |