IXTP08N100P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.7 EUR |
| 31+ | 2.32 EUR |
| 39+ | 1.86 EUR |
| 50+ | 1.69 EUR |
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Technische Details IXTP08N100P IXYS
Description: MOSFET N-CH 1000V 800MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 50µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
Weitere Produktangebote IXTP08N100P nach Preis ab 1.69 EUR bis 4.21 EUR
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IXTP08N100P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 42W Case: TO220AB On-state resistance: 20Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP08N100P | Hersteller : IXYS |
MOSFETs 0.8 Amps 1000V 20 Rds |
auf Bestellung 267 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP08N100P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 800MA TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
auf Bestellung 242 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP08N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 0.8A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |