IXTP08N50D2
Produktcode: 208088
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Weitere Produktangebote IXTP08N50D2 nach Preis ab 2.26 EUR bis 7.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IXTP08N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO220AB On-state resistance: 4.6Ω Mounting: THT Gate charge: 312nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP08N50D2 | IXYS |
MOSFETs N-CH MOSFETS 500V 800MA |
auf Bestellung 482 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP08N50D2 | IXYS |
Description: MOSFET N-CH 500V 800MA TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-220-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP08N50D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.56 EUR |
| 22+ | 3.93 EUR |
| 27+ | 3.21 EUR |
| 50+ | 2.58 EUR |
| 100+ | 2.26 EUR |
| IXTP08N50D2 |
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Hersteller: IXYS
MOSFETs N-CH MOSFETS 500V 800MA
MOSFETs N-CH MOSFETS 500V 800MA
auf Bestellung 482 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.44 EUR |
| 10+ | 3.81 EUR |
| 100+ | 3.25 EUR |
| 500+ | 3.01 EUR |
| IXTP08N50D2 |
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Hersteller: IXYS
Description: MOSFET N-CH 500V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
Description: MOSFET N-CH 500V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.83 EUR |
| 50+ | 3.99 EUR |
| 100+ | 3.62 EUR |
Mit diesem Produkt kaufen
| TDA7388 Produktcode: 14750
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Lieblingsprodukt
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Hersteller: ST
IC > IC Niederfrequenzverstärker
Gehäuse: Flexiwatt-25
Versorgungsspannung Uпит, V: 8...28 V
Leistung P, W: 4x41 W
Lastwiderstand R, Ohm: 4 Ohm
Klirrfaktor Kг, %: 0,0004 %
IC > IC Niederfrequenzverstärker
Gehäuse: Flexiwatt-25
Versorgungsspannung Uпит, V: 8...28 V
Leistung P, W: 4x41 W
Lastwiderstand R, Ohm: 4 Ohm
Klirrfaktor Kг, %: 0,0004 %
verfügbar: 60 St.
- 11 St. - stock Köln
- 49 St. - lieferbar in 3-4 Wochen
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4 EUR |
| 10+ | 3.33 EUR |