Technische Details IXTP110N055T2 Ixys Corporation
Description: MOSFET N-CH 55V 110A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP110N055T2 nach Preis ab 2.3 EUR bis 8.1 EUR
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IXTP110N055T2 | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns Case: TO220AB Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 57nC Reverse recovery time: 38ns On-state resistance: 6.6mΩ Drain current: 110A Drain-source voltage: 55V Power dissipation: 180W |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP110N055T2 | IXYS |
Description: MOSFET N-CH 55V 110A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 216 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP110N055T2 | IXYS |
MOSFETs 110 Amps 55V 0.0066 Rds |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP110N055T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Case: TO220AB
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 57nC
Reverse recovery time: 38ns
On-state resistance: 6.6mΩ
Drain current: 110A
Drain-source voltage: 55V
Power dissipation: 180W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Case: TO220AB
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 57nC
Reverse recovery time: 38ns
On-state resistance: 6.6mΩ
Drain current: 110A
Drain-source voltage: 55V
Power dissipation: 180W
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.44 EUR |
| 23+ | 3.81 EUR |
| 26+ | 3.39 EUR |
| 32+ | 2.73 EUR |
| 36+ | 2.38 EUR |
| 38+ | 2.3 EUR |
| IXTP110N055T2 |
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Hersteller: IXYS
Description: MOSFET N-CH 55V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.72 EUR |
| 50+ | 3.4 EUR |
| 100+ | 3.08 EUR |
| IXTP110N055T2 |
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Hersteller: IXYS
MOSFETs 110 Amps 55V 0.0066 Rds
MOSFETs 110 Amps 55V 0.0066 Rds
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.1 EUR |
| 10+ | 4.05 EUR |
| 100+ | 3.39 EUR |
| 500+ | 3.08 EUR |