IXTP110N055T2 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 23+ | 3.2 EUR |
| 26+ | 2.85 EUR |
| 32+ | 2.29 EUR |
| 36+ | 2 EUR |
| 38+ | 1.93 EUR |
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Technische Details IXTP110N055T2 IXYS
Description: MOSFET N-CH 55V 110A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP110N055T2 nach Preis ab 2.59 EUR bis 6.9 EUR
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IXTP110N055T2 | IXYS |
Description: MOSFET N-CH 55V 110A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 216 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP110N055T2 | IXYS |
MOSFETs 110 Amps 55V 0.0066 Rds |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP110N055T2 |
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Hersteller: IXYS
Description: MOSFET N-CH 55V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.65 EUR |
| 50+ | 2.86 EUR |
| 100+ | 2.59 EUR |
| IXTP110N055T2 |
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Hersteller: IXYS
MOSFETs 110 Amps 55V 0.0066 Rds
MOSFETs 110 Amps 55V 0.0066 Rds
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.9 EUR |
| 10+ | 3.4 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.6 EUR |
| 1000+ | 2.59 EUR |