IXTP120P065T Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 65V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 2+ | 10.89 EUR |
| 50+ | 6.26 EUR |
| 100+ | 5.8 EUR |
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Technische Details IXTP120P065T Littelfuse Inc.
Description: MOSFET P-CH 65V 120A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 298W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP120P065T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXTP120P065T | Hersteller : Littelfuse |
Trans MOSFET P-CH 65V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP120P065T | Hersteller : IXYS |
MOSFETs -120 Amps -65V 0.01 Rds |
Produkt ist nicht verfügbar |
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IXTP120P065T | Hersteller : IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Mounting: THT Technology: TrenchP™ Type of transistor: P-MOSFET Case: TO220AB Kind of package: tube Polarisation: unipolar Drain current: -120A Drain-source voltage: -65V Gate charge: 185nC Reverse recovery time: 53ns On-state resistance: 10mΩ Gate-source voltage: ±15V Power dissipation: 298W Kind of channel: enhancement |
Produkt ist nicht verfügbar |


