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IXTP120P065T

IXTP120P065T Littelfuse Inc.


littelfuse_discrete_mosfets_p-channel_ixt_120p065t_datasheet.pdf.pdf
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 65V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details IXTP120P065T Littelfuse Inc.

Description: MOSFET P-CH 65V 120A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 298W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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IXTP120P065T IXTP120P065T Hersteller : Littelfuse littelfusediscretemosfetspchannelixt120p065tdatasheet.pdf Trans MOSFET P-CH 65V 120A 3-Pin(3+Tab) TO-220AB
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IXTP120P065T IXTP120P065T Hersteller : IXYS Littelfuse_Discrete_MOSFETs_P_Channel_IXT_120P065T_Datasheet.PDF MOSFETs -120 Amps -65V 0.01 Rds
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IXTP120P065T IXTP120P065T Hersteller : IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Technology: TrenchP™
Type of transistor: P-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: -120A
Drain-source voltage: -65V
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
Kind of channel: enhancement
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