IXTP120P065T IXYS

Description: MOSFET P-CH 65V 120A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 298W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.