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IXTP12N50P

IXTP12N50P IXYS


pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 12A
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.62 EUR
250+2.57 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTP12N50P IXYS

Description: MOSFET N-CH 500V 12A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.

Weitere Produktangebote IXTP12N50P nach Preis ab 2.57 EUR bis 5.84 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTP12N50P IXTP12N50P Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 12A
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.62 EUR
250+2.57 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IXTP12N50P IXTP12N50P Hersteller : Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-12N50P-Datasheet.PDF?assetguid=1EBA20B0-2CD4-4FB5-BDDC-FCD960E7D1DD Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.84 EUR
50+2.95 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTP12N50P IXTP12N50P Hersteller : Littelfuse rete_mosfets_n-channel_standard_ixt_12n50p_datasheet.pdf.pdf Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220
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IXTP12N50P IXTP12N50P Hersteller : IXYS media-3319745.pdf MOSFETs 12 Amps 500V 0.5 Ohm Rds
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