IXTP12N50P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 12A
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.86 EUR |
| 21+ | 3.46 EUR |
| 26+ | 2.76 EUR |
| 28+ | 2.62 EUR |
| 250+ | 2.57 EUR |
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Technische Details IXTP12N50P IXYS
Description: MOSFET N-CH 500V 12A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.
Weitere Produktangebote IXTP12N50P nach Preis ab 2.57 EUR bis 5.84 EUR
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IXTP12N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Drain current: 12A Drain-source voltage: 500V On-state resistance: 0.5Ω Reverse recovery time: 300ns Gate charge: 29nC Technology: Polar™ Kind of channel: enhancement Gate-source voltage: ±30V |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP12N50P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP12N50P | Hersteller : Littelfuse |
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IXTP12N50P | Hersteller : IXYS |
MOSFETs 12 Amps 500V 0.5 Ohm Rds |
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