IXTP12N50PM IXYS/Littelfuse
Hersteller: IXYS/Littelfuse
N-канальний ПТ, Udss, В = 500, Id = 6 A, Ciss, пФ @ Uds, В = 1830, Qg, нКл = 29, Rds = 0,5 Ом, Ugs(th) = 5,5 В, Р, Вт = 50 Вт, Тексп, °C = -55...+150, Тип монт. = вивідний,... Група товару: Транзистори Корпус: TO-220-3 Од. вим: шт
Anzahl je Verpackung: 50 Stücke
verfügbar 10 Stücke:
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Technische Details IXTP12N50PM IXYS/Littelfuse
Description: MOSFET N-CH 500V 6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.
Weitere Produktangebote IXTP12N50PM
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IXTP12N50PM | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTP12N50PM | Hersteller : IXYS |
MOSFETs 12.0 Amps 500 V 0.5 Ohm Rds |
Produkt ist nicht verfügbar |