IXTP12N70X2 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 180W
Kind of channel: enhancement
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Technische Details IXTP12N70X2 IXYS
Description: MOSFET N-CH 700V 12A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP12N70X2
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IXTP12N70X2 | Hersteller : IXYS |
Description: MOSFET N-CH 700V 12A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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IXTP12N70X2 | Hersteller : IXYS |
MOSFETs TO220 700V 12A N-CH X2CLASS |
Produkt ist nicht verfügbar |