IXTP12N70X2 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Power dissipation: 180W
Gate charge: 19nC
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Technische Details IXTP12N70X2 IXYS
Description: MOSFET N-CH 700V 12A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP12N70X2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTP12N70X2 | IXYS |
Description: MOSFET N-CH 700V 12A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXTP12N70X2 | IXYS |
MOSFETs TO220 700V 12A N-CH X2CLASS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTP12N70X2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 700V 12A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 700V 12A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP12N70X2 |
|
Hersteller: IXYS
MOSFETs TO220 700V 12A N-CH X2CLASS
MOSFETs TO220 700V 12A N-CH X2CLASS
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH