IXTP130N15X4 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 150V 130A TO220
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
| Anzahl | Preis |
|---|---|
| 2+ | 10.84 EUR |
| 50+ | 8.65 EUR |
| 100+ | 7.74 EUR |
| 500+ | 6.83 EUR |
| 1000+ | 6.14 EUR |
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Technische Details IXTP130N15X4 IXYS
Description: MOSFET N-CH 150V 130A TO220, Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V.
Weitere Produktangebote IXTP130N15X4 nach Preis ab 7.85 EUR bis 11.02 EUR
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IXTP130N15X4 | Hersteller : IXYS |
MOSFET MSFT N-CH HIPERFET-Q 3&44 |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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