auf Bestellung 542 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.8 EUR |
| 10+ | 6.76 EUR |
| 100+ | 6.14 EUR |
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Technische Details IXTP140N12T2 IXYS
Description: MOSFET N-CH 120V 140A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V, Power Dissipation (Max): 577W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V.
Weitere Produktangebote IXTP140N12T2 nach Preis ab 6.13 EUR bis 9.86 EUR
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IXTP140N12T2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 120V 140A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V Power Dissipation (Max): 577W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V |
auf Bestellung 146 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP140N12T2 | Hersteller : Littelfuse |
 Power MOSFET |
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IXTP140N12T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 140A Power dissipation: 577W Case: TO220AB On-state resistance: 10mΩ Mounting: THT Gate charge: 174nC Kind of package: tube Reverse recovery time: 65ns Features of semiconductor devices: thrench gate power mosfet Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTP140N12T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 140A Power dissipation: 577W Case: TO220AB On-state resistance: 10mΩ Mounting: THT Gate charge: 174nC Kind of package: tube Reverse recovery time: 65ns Features of semiconductor devices: thrench gate power mosfet Kind of channel: enhancement |
Produkt ist nicht verfügbar |