| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.98 EUR |
| 10+ | 15.4 EUR |
| 50+ | 9.82 EUR |
| 100+ | 9.38 EUR |
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Technische Details IXTP150N15X4 IXYS
Description: MOSFET N-CH 150V 150A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 75A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V.
Weitere Produktangebote IXTP150N15X4 nach Preis ab 9.13 EUR bis 17.17 EUR
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IXTP150N15X4 | Littelfuse Inc. |
 Description: MOSFET N-CH 150V 150A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 75A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V |
auf Bestellung 840 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP150N15X4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns Mounting: THT Power dissipation: 480W Gate charge: 105nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 150A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 7.2mΩ Reverse recovery time: 100ns |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTP150N15X4 |
|
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 150A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 75A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Description: MOSFET N-CH 150V 150A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 75A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.17 EUR |
| 50+ | 10.12 EUR |
| 100+ | 9.41 EUR |
| 500+ | 9.13 EUR |
| IXTP150N15X4 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Mounting: THT
Power dissipation: 480W
Gate charge: 105nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 7.2mΩ
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Mounting: THT
Power dissipation: 480W
Gate charge: 105nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 7.2mΩ
Reverse recovery time: 100ns
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)