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IXTP160N04T2

IXTP160N04T2 Littelfuse


media.pdf Hersteller: Littelfuse
Trans MOSFET N-CH 40V 160A Automotive 3-Pin(3+Tab) TO-220
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Technische Details IXTP160N04T2 Littelfuse

Description: MOSFET N-CH 40V 160A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V.

Weitere Produktangebote IXTP160N04T2

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IXTP160N04T2 IXTP160N04T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D343726746F820&compId=IXTA(P)160N04T2.pdf?ci_sign=1ef255f02603c204453a71fc648bc877e8e7741f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Anzahl je Verpackung: 1 Stücke
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IXTP160N04T2 IXTP160N04T2 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_160n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
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IXTP160N04T2 IXTP160N04T2 Hersteller : IXYS media-3322466.pdf MOSFETs 160 Amps 40V
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IXTP160N04T2 IXTP160N04T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D343726746F820&compId=IXTA(P)160N04T2.pdf?ci_sign=1ef255f02603c204453a71fc648bc877e8e7741f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH