IXTP18P10T
Produktcode: 210499
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote IXTP18P10T nach Preis ab 2.42 EUR bis 7.38 EUR
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IXTP18P10T | Ixys Corporation |
Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP18P10T | IXYS |
MOSFETs 18 Amps 100V 0.12 Rds |
auf Bestellung 1060 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP18P10T | IXYS |
Description: MOSFET P-CH 100V 18A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
auf Bestellung 3715 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP18P10T |
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Hersteller: Ixys Corporation
Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-220AB
Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-220AB
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 5.32 EUR |
| IXTP18P10T |
|
Hersteller: IXYS
MOSFETs 18 Amps 100V 0.12 Rds
MOSFETs 18 Amps 100V 0.12 Rds
auf Bestellung 1060 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.62 EUR |
| 10+ | 3.37 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.56 EUR |
| IXTP18P10T |
|
Hersteller: IXYS
Description: MOSFET P-CH 100V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET P-CH 100V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 3715 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.38 EUR |
| 50+ | 3.75 EUR |
| 100+ | 3.39 EUR |
| 500+ | 2.77 EUR |
| 1000+ | 2.58 EUR |
| 2000+ | 2.42 EUR |