IXTP18P10T IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Reverse recovery time: 62ns
Drain-source voltage: -100V
Drain current: -18A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: THT
Case: TO220AB
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.66 EUR |
| 40+ | 1.79 EUR |
| 43+ | 1.69 EUR |
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Technische Details IXTP18P10T IXYS
Description: MOSFET P-CH 100V 18A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V.
Weitere Produktangebote IXTP18P10T nach Preis ab 1.62 EUR bis 5.46 EUR
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IXTP18P10T | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB Reverse recovery time: 62ns Drain-source voltage: -100V Drain current: -18A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 83W Polarisation: unipolar Kind of package: tube Gate charge: 39nC Technology: TrenchP™ Kind of channel: enhancement Gate-source voltage: ±15V Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 242 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP18P10T | Hersteller : Ixys Corporation |
Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP18P10T | Hersteller : Littelfuse Inc. |
Description: MOSFET P-CH 100V 18A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
auf Bestellung 99 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP18P10T | Hersteller : IXYS |
MOSFETs 18 Amps 100V 0.12 Rds |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP18P10T Produktcode: 210499
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IXTP18P10T | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP18P10T | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP18P10T | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |