| Anzahl | Preis |
|---|---|
| 1+ | 7.6 EUR |
| 10+ | 4.21 EUR |
| 100+ | 3.87 EUR |
| 500+ | 3.82 EUR |
| 1000+ | 3.75 EUR |
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Technische Details IXTP1N120P IXYS
Description: MOSFET N-CH 1200V 1A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 63W (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP1N120P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTP1N120P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 1200V 1A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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