auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.37 EUR |
| 50+ | 4.22 EUR |
| 100+ | 3.68 EUR |
| 250+ | 3.54 EUR |
| 500+ | 3.12 EUR |
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Technische Details IXTP1R6N100D2 IXYS
Description: MOSFET N-CH 1000V 1.6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Weitere Produktangebote IXTP1R6N100D2 nach Preis ab 2.04 EUR bis 3.20 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXTP1R6N100D2 | Hersteller : IXYS |
 IXTP1R6N100D2 THT N channel transistors |
auf Bestellung 141 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP1R6N100D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 1.6A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP1R6N100D2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 1.6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
Produkt ist nicht verfügbar |