IXTP1R6N100D2 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
| Anzahl | Preis |
|---|---|
| 17+ | 4.4 EUR |
| 19+ | 3.86 EUR |
| 50+ | 2.82 EUR |
| 100+ | 2.5 EUR |
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Technische Details IXTP1R6N100D2 IXYS
Description: MOSFET N-CH 1000V 1.6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Weitere Produktangebote IXTP1R6N100D2 nach Preis ab 3.48 EUR bis 7 EUR
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IXTP1R6N100D2 | Hersteller : IXYS |
MOSFETs N-CH MOSFETS (D2) 1000V 1.6A |
auf Bestellung 462 Stücke: Lieferzeit 10-14 Tag (e) |
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