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Technische Details IXTP1R6N100D2 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 1.6A, Power dissipation: 100W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 10Ω, Mounting: THT, Kind of package: tube, Kind of channel: depletion, Reverse recovery time: 11ns, Gate charge: 645nC.
Weitere Produktangebote IXTP1R6N100D2 nach Preis ab 2.98 EUR bis 9.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IXTP1R6N100D2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns Gate charge: 645nC |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP1R6N100D2 | IXYS |
Description: MOSFET N-CH 1000V 1.6A TO220AB |
auf Bestellung 1350 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP1R6N100D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.24 EUR |
| 19+ | 4.59 EUR |
| 50+ | 3.36 EUR |
| 100+ | 2.98 EUR |
| IXTP1R6N100D2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.6A TO220AB
Description: MOSFET N-CH 1000V 1.6A TO220AB
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.87 EUR |
| 10+ | 6.56 EUR |
| 50+ | 5.14 EUR |
| 100+ | 4.68 EUR |
| 500+ | 3.88 EUR |




