IXTP20N65X IXYS
Hersteller: IXYS
Description: MOSFET N-CH 650V 20A TO220
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Technische Details IXTP20N65X IXYS
Description: MOSFET N-CH 650V 20A TO220, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 320W (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.
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IXTP20N65X | IXYS |
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IXTP20N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 320W Case: TO220AB On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.35µs Features of semiconductor devices: ultra junction x-class Gate charge: 35nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTP20N65X |
|
Hersteller: IXYS
MOSFETs 650V/9A Power MOSFET
MOSFETs 650V/9A Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP20N65X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH