IXTP20N65X2 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 650V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.04 EUR |
| 50+ | 4.19 EUR |
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Technische Details IXTP20N65X2 Littelfuse Inc.
Description: MOSFET N-CH 650V 20A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V.
Weitere Produktangebote IXTP20N65X2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTP20N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 290W Case: TO220AB On-state resistance: 0.185Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.35µs Features of semiconductor devices: ultra junction x-class Gate charge: 27nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTP20N65X2 | Hersteller : IXYS |
MOSFETs TO220 650V 20A N-CH X3CLASS |
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IXTP20N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 290W Case: TO220AB On-state resistance: 0.185Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.35µs Features of semiconductor devices: ultra junction x-class Gate charge: 27nC |
Produkt ist nicht verfügbar |